METHOD FOR CORRECTING DEFECT OF MASK AND DEVICE FOR CORRECTING DEFECT

摘要

PROBLEM TO BE SOLVED: To satisfactorily correct a pattern defect of photomask without generating an additional defect due to overgrinding even when beam irradiation position is deviated. SOLUTION: This method for correcting defect of photomask corrects a microscopic protruding defect which remains after correcting the protruding defect existing on the edge of pattern of the photomask. Therein, a protruding length of the defect 23 is measured by a dimension measuring device beforehand and the edge part on the opposite side to a pattern of the defect 23 is irradiated with a focusing ion beam 27 of a quantity less than the beam irradiation quantity required for grinding the pattern 21 by using the focusing ion beam device. By utilizing the phenomenon that etching proceeds faster on the edge part than on a pattern central part, the grinding according to the measured protruding length is performed.