SPUTTERING TARGET, HALFTONE PHASE SHIFT MASK AND BLANK

摘要

PROBLEM TO BE SOLVED: To provide a sputtering target which is used for the manufacture of a halftone phase shift mask and a blank and which does not produce particle defects during depositing a film. SOLUTION: The sputtering target is an alloy composed of two or more kinds of elements, and the alloy is not a compound of these elements. The alloy is a eutectic alloy. One of the two or more elements is Si. The above sputtering target is used to produce a halftone phase shift mask and a blank.