METHOD AND APPARATUS FOR PRODUCING SILICON CARBIDE SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To prevent contamination by particles when a mixed gas is introduced to produce a high quality silicon carbide single crystal. SOLUTION: The silicon carbide single crystal is grown from a silicon carbide single crystal substrate 10 being a seed crystal by arranging the silicon carbide single crystal substrate 10 being the seed crystal in a crucible 4 and introducing a mixed gas comprising a gas containing Si and a gas containing C. At this time, the flow direction of the mixed gas supplied from a mixed gas introducing tube 13 is changed by allowing the mixed gas to collide to a baffle plate 20 and then the mixed gas is introduced onto the silicon carbide single crystal substrate 10.