| 摘要 |
PURPOSE: A method for fabricating a blue semiconductor laser using a plasma display process is provided to reduce the surface leakage and improve an electric characteristics by performing a plasma process for the nitrogen vacancy. CONSTITUTION: An n-bottom contact layer(200), an n-bottom clad layer(300), an n-bottom optical waveguide layer(400), an active layer(500), a p-top optical waveguide layer(600), a p-top clad layer(700), and a p-top contact layer(800) are formed on a substrate(100). The n-bottom contact layer(200) is exposed partially by using a dry etch method. A ridge pattern is formed on the p-top contact layer(800) to form a ridge. An electric characteristic is improved by complementing the nitrogen vacancy and the dangling bonding on the exposed n-bottom contact layer(200) and the p-top contact layer(800). An n-electrode(1000) is formed on the n-bottom contact layer(200). An oxide layer(1100) is deposited thereon. The oxide layer(1100) is exposed therefrom. The oxide layer(1100) is removed from the ridge. A p-electrode(1300) is deposited on the exposed ridge.
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