| 摘要 |
PROBLEM TO BE SOLVED: To provide a light emitting element array chip which can hold a quantity of light difference of chips in wafers and among wafers within a fixed range by adjusting values of built-in resistances in units of chips at an evaluation time of the quantity of light or after the evaluation. SOLUTION: The chip-incorporated resistance 10 is formed with the use of a pnpn structure semiconductor layer. Two electrodes 11a and 11b are set on the semiconductor layer 103, each of which is connected to an aluminum wiring line 40 through a through hole opened into an insulating film 110. In this state, the resistance 10 formed by the semiconductor layer 103 between the electrodes 11a and 11b is short-circuited by a resistance short-circuiting line 13. An average quantity of light of each chip in a wafer state is measured. The resistance short-circuiting line 13 is burnt off with the use of a laser light for chips having a large quantity of light. Resistance values are adjusted in this manner to change the size of a light emitting current, thereby correcting the quantity of light. |
