发明名称 |
Method of forming differential spacers for individual optimization of n-channel and p-channel transistors |
摘要 |
A method of forming a semiconductor with n-channel and p-channel transistors with optimum gate to drain overlap capacitances for each of the different types of transistors, uses differential spacing on gate electrodes for the respective transistors. A first offset spacer is formed on the gate electrode and an n-channel extension implant is performed to create source/drain extensions for the n-channel transistors spaced an optimum distance away from the gate electrodes. Second offset spacers are formed on the first offset spacers, and a p-channel source/drain extension implant is formed to create source/drain extensions for the p-channel transistors. The increased spacing of the source/drain extension implants away from the gate electrodes in the p-channel transistors accounts for the faster diffusion of the p-type dopants in comparison to the n-type dopants.
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申请公布号 |
US6562676(B1) |
申请公布日期 |
2003.05.13 |
申请号 |
US20010014426 |
申请日期 |
2001.12.14 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
JU DONG-HYUK |
分类号 |
H01L27/08;H01L21/336;H01L21/8238;H01L27/092;H01L29/78;H01L29/786;(IPC1-7):H01L21/823 |
主分类号 |
H01L27/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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