发明名称 |
Barrier layer structure for copper metallization and method of forming the structure |
摘要 |
A barrier layer structure and a method of forming the structure. The barrier layer structure comprises a bilayer, with a first layer formed by chemical vapor deposition and a second layer formed by physical vapor deposition. The first barrier layer comprises a metal or a metal nitride and the second barrier layer comprises a metal or a metal nitride. The barrier bilayer is applicable to copper metallization.
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申请公布号 |
US6562715(B1) |
申请公布日期 |
2003.05.13 |
申请号 |
US20000635738 |
申请日期 |
2000.08.09 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
CHEN LING;MARCADAL CHRISTOPHE |
分类号 |
C23C16/34;C23C28/00;C23C28/02;H01L21/285;H01L21/768;(IPC1-7):C23C14/18 |
主分类号 |
C23C16/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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