发明名称 Barrier layer structure for copper metallization and method of forming the structure
摘要 A barrier layer structure and a method of forming the structure. The barrier layer structure comprises a bilayer, with a first layer formed by chemical vapor deposition and a second layer formed by physical vapor deposition. The first barrier layer comprises a metal or a metal nitride and the second barrier layer comprises a metal or a metal nitride. The barrier bilayer is applicable to copper metallization.
申请公布号 US6562715(B1) 申请公布日期 2003.05.13
申请号 US20000635738 申请日期 2000.08.09
申请人 APPLIED MATERIALS, INC. 发明人 CHEN LING;MARCADAL CHRISTOPHE
分类号 C23C16/34;C23C28/00;C23C28/02;H01L21/285;H01L21/768;(IPC1-7):C23C14/18 主分类号 C23C16/34
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