发明名称 Method for forming cross-linking photoresist and structures formed thereby
摘要 A method for forming a cross-linking photoresist layer is provided. The method includes steps of providing a photoresist layer; activating the photoresist layer with a light provided by a light source; and putting the photoresist layer in a vapor of a cross-linking agent to form the cross-linking photoresist layer.
申请公布号 US6562546(B2) 申请公布日期 2003.05.13
申请号 US20020053132 申请日期 2002.01.17
申请人 WINBOND ELECTRONICS CORP. 发明人 CHANG WEN-PIN
分类号 B32B3/02;G03F7/038;G03F7/40;(IPC1-7):G03F7/00 主分类号 B32B3/02
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