发明名称 |
Poly-silicon thin film transistor and method for fabricating thereof |
摘要 |
A thin film transistor. The thin film transistor comprises a substrate, a dielectric layer and a polysilicon layer. A gate electrode is located on the substrate. A dielectric layer is located on the substrate and the gate electrode. A polysilicon layer is located on the dielectric layer. The polysilicon layer comprises a channel region and a doped region, wherein the channel region is located above the gate electrode and the doped region is adjacent to the channel region.
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申请公布号 |
US6562670(B2) |
申请公布日期 |
2003.05.13 |
申请号 |
US20010927797 |
申请日期 |
2001.08.10 |
申请人 |
HANNSTAR DISPLAY CORPORATION |
发明人 |
SHIH PO-SHENG |
分类号 |
H01L21/336;H01L29/786;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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