| 摘要 |
A high-frequency circuit, wherein there is provided a switching transistor connected between an input terminal and an output terminal, with a gate electrode connected to a control terminal via a resistance element, and with an effective gate portion of the gate electrode divided into a plurality of sections, and arrangement is made of additional capacitance elements added in parallel to a capacitance between a gate and a source or drain of the switching transistor at positions in proximity to one ends of at least two effective gate sections of the plurality of effective gate sections. Preferably, there is provided a short-circuiting transistor similarly having an additional capacitance element between the output terminal Tout and a reference voltage supply line.
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