| 发明名称 |
OXIDE THIN FILM HAVING QUARTZ CRYSTAL STRUCTURE AND PROCESS FOR PRODUCING THE SAME |
| 摘要 |
An oxide thin film having a quartz crystal structure formed on a substrate, the oxide thin film being composed of a single layer or a plurality of layers having a thickness of 5 nm to 50 .mu.m per layer, each of the layer comprising silicon dioxide, germanium dioxide, or a mixture thereof. |
| 申请公布号 |
CA2153848(C) |
申请公布日期 |
2003.05.13 |
| 申请号 |
CA19952153848 |
申请日期 |
1995.07.13 |
| 申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
TANAKA, MOTOYUKI;IMAI, TAKAHIRO;FUJIMORI, NAOJI |
| 分类号 |
C23C14/10;C23C16/40;C23C18/12;C30B5/00;C30B23/02;C30B25/02 |
主分类号 |
C23C14/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
