发明名称 |
Copper electroplating liquid, pretreatment liquid for copper electroplating and method of copper electroplating |
摘要 |
In filling fine via holes or trenches of the wiring (LSI) pattern formed on a semiconductor wafer, a copper electroplating is carried out by using a copper electroplating solution. containing an azole or a silane coupling agent, or a copper electroplating is carried out after the immersion into a pretreatment solution containing an azole or a silane coupling agent. As illustratively shown above, the addition of a component having the action to inhibit the dissolution of copper to an electroplating solution or the pretreatment by a solution containing a component having the action to inhibit the dissolution of copper can inhibit the dissolution of a copper seed layer covering poorly, and thus can prevent the occurrence of defects such as voids and seams.
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申请公布号 |
US6562222(B1) |
申请公布日期 |
2003.05.13 |
申请号 |
US20010980947 |
申请日期 |
2001.12.05 |
申请人 |
NIKKO MATERIALS COMPANY, LIMITED |
发明人 |
SEKIGUCHI JYUNNOSUKE;YAMAGUCHI SYUNICHIRO |
分类号 |
C25D3/38;C25D5/34;C25D7/12;H01L21/288;(IPC1-7):C25D3/38 |
主分类号 |
C25D3/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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