| 摘要 |
A method is provided for forming a relaxed silicon germanium layer with a high germanium content on a silicon substrate. The method comprises: depositing a single-crystal silicon (Si) buffer layer overlying the silicon substrate; depositing a layer of single-crystal silicon germanium (Si1-xGex) overlying the Si buffer layer having a thickness of 1000 to 5000 Å; implanting the Si1-xGex layer with ionized molecular hydrogen (H2+) a projected range of approximately 100 to 300 Å into the underlying Si buffer layer; optionally, implanting the Si1-xGex layer with a species selected such as boron, He, or Si; annealing; and, in response to the annealing, converting the Si1-xGex layer to a relaxed Si1-xGex layer. Optionally, after annealing, an additional layer of single-crystal Si1-xGex having a thickness of greater than 1000 Å can be deposited overlying the relaxed layer of Si1-xGex.
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