发明名称 |
Method and apparatus for forming deposition film, and method for treating substrate |
摘要 |
A gas adsorptive member is disposed in a space communicating with film deposition chambers, and deposition films are deposited while continuously feeding gas components released from this member, thereby enabling the high quality and uniform deposition films to be formed on the substrate with good reproducibility.
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申请公布号 |
US6562400(B2) |
申请公布日期 |
2003.05.13 |
申请号 |
US20010844071 |
申请日期 |
2001.04.30 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
TAMURA HIDEO;KANAI MASAHIRO;TAKAI YASUYOSHI;SHIMODA HIROSHI;TSUZUKI HIDETOSHI |
分类号 |
C23C14/34;C23C14/56;H01L21/203;H01L21/205;H01L21/31;H01L31/04;H01L31/20;(IPC1-7):B05D3/12;B29D7/00 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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