| 发明名称 |
Apparatus and method for surface finishing a silicon film |
| 摘要 |
A method of smoothing a silicon surface formed on a substrate. According to the present invention a substrate having a silicon surface is placed into a chamber and heated to a temperature of between 1000°-1300° C. While the substrate is heated to a temperature between 1000°-1300° C., the silicon surface is exposed to a gas mix comprising H2 and HCl in the chamber to smooth the silicon surface.
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| 申请公布号 |
US6562720(B2) |
申请公布日期 |
2003.05.13 |
| 申请号 |
US20020077439 |
申请日期 |
2002.02.14 |
| 申请人 |
APPLIED MATERIALS, INC.;SILICON GENESIS CORPORATION |
发明人 |
THILDERKVIST ANNA LENA;COMITA PAUL;SCUDDER LANCE;RILEY NORMA |
| 分类号 |
H01L21/302;C23C16/02;C30B29/06;C30B33/12;H01L21/00;H01L21/205;H01L21/306;H01L21/3065;H01L21/311;H01L21/324;H01L21/762;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/302 |
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