| 摘要 |
A semiconductor device having: a base area of the first conduction type formed on a semiconductor substrate; an emitter area of the second conduction type formed in the base area; and a collector area of the second conduction type formed as joined to the base area. In the collector area, an impurity area of the first conduction type is formed as separated from the base area. A surface resistor is connected to a base electrode connected to the base area. The surface resistor is connected, at other position thereof, to the impurity area.
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