发明名称 Flash memory structure having double celled elements and method for fabricating the same
摘要 A flash memory array having a plurality of bitlines, at least one wordline and a plurality of flash memory flash memory elements, wherein each flash memory element includes two transistors for storing two bits, and wherein each flash memory element is positioned between a pair of adjacent bitlines. A method is also presented for fabricating the flash memory array having the plurality of flash memory elements, wherein each flash memory element is configured for storing two bits.
申请公布号 US6563736(B2) 申请公布日期 2003.05.13
申请号 US20010860736 申请日期 2001.05.18
申请人 IBM CORPORATION 发明人 HSU LOUIS L.;JOSHI RAJIV V.;RADENS CARL;MANDELMAN JACK A.;TONTI WILLIAM R.
分类号 G11C16/04;H01L21/8247;H01L27/115;(IPC1-7):G11C16/04 主分类号 G11C16/04
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