Semiconductor device having multilayer passivation layer formed over memory cell fuse area

摘要

A semiconductor device of the present invention is provided with a first metal wire formed above a semiconductor substrate with an interlayer insulating film intervened, a fuse formed on interlayer insulating film so as to be spaced at a distance away from first metal wire, an insulating film which covers first metal wire and which has an opening above fuse, a second metal wire formed on insulating film, a first passivation film which covers second metal wire and fuse, and a second passivation film formed on first passivation film, made of a material different from that of first passivation film and having an opening above fuse.