发明名称 |
Method of manufacturing nitride semiconductor substrate |
摘要 |
A mask film of a material on which substantially no nitride semiconductor grows and having a plurality of openings in a stripe shape is formed on a main surface of a base substrate. Then, on the base substrate, a semiconductor layer of nitride is selectively grown through the mask film. Then, a laser beam is irradiated upon the interface between the semiconductor layer and the base substrate to separate the semiconductor layer from the base substrate, so that a nitride semiconductor substrate is formed from the semiconductor layer.
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申请公布号 |
US6562701(B2) |
申请公布日期 |
2003.05.13 |
申请号 |
US20020062512 |
申请日期 |
2002.02.05 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
ISHIDA MASAHIRO;UEDA DAISUKE;YURI MASAAKI |
分类号 |
C30B25/02;C30B25/18;H01L21/20;H01L33/00;(IPC1-7):H01L21/302 |
主分类号 |
C30B25/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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