发明名称 |
Dual damascene structure employing nitrogenated silicon carbide and non-nitrogenated silicon carbide etch stop layers |
摘要 |
Within a dual damascene method for forming a dual damascene aperture within a microelectronic fabrication there is employed a first etch stop layer formed of a first material and a second etch stop layer formed of a second material. One of the first material and the second material is a non-nitrogenated silicon carbide material and the other of the first material and the second material is a nitrogenated silicon carbide material. By employing the first material and the second material, there may be etched completely through the first etch stop layer to reach a contact region formed there beneath while not etching completely through the second etch stop layer to reach a first dielectric layer formed there beneath.
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申请公布号 |
US6562725(B2) |
申请公布日期 |
2003.05.13 |
申请号 |
US20010899420 |
申请日期 |
2001.07.05 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD |
发明人 |
TSAI MING-HSING;HSIEH CHING-HUA;SHUE SHAU-LIN;YU CHEN-HUA |
分类号 |
H01L21/311;H01L21/314;H01L21/768;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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