| 发明名称 |
Method of manufacturing GaN ingots |
| 摘要 |
A novel method for growing semiconductor material including GaN is disclosed. The method involves placing a first substance into a growth reactor, supplying a second gaseous substance into the grouth reactor, and applying electrical field to the second gaseous substance to produce the cry stalline compound material.
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| 申请公布号 |
US6562124(B1) |
申请公布日期 |
2003.05.13 |
| 申请号 |
US20000585332 |
申请日期 |
2000.06.02 |
| 申请人 |
TECHNOLOGIES AND DEVICES INTERNATIONAL, INC. |
发明人 |
IVANTZOV VLADIMIR;SUKHOVEEV VITALIY;DMITRIEV VLADIMIR |
| 分类号 |
C30B9/00;C30B9/14;C30B11/00;C30B17/00;C30B25/02;C30B25/18;C30B33/00;H01L21/20;(IPC1-7):C30B15/02 |
主分类号 |
C30B9/00 |
| 代理机构 |
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