Gate array with multiple dielectric properties and method for forming same

摘要

The invention provides an integrated circuit fabricated on a semiconductor substrate. The integrated circuit comprises a first field effect transistor and a second field effect transistor. The first field effect transistor comprises a first polysilicon gate positioned above a first channel region of the substrate and isolated from the first channel region by a first dielectric layer extending the entire length of the first polysilicon gate. The first dielectric layer comprises a first dielectric material with a first dielectric constant. The second field effect transistor comprises a second polysilicon gate positioned above a second channel region on the substrate and isolated from the second channel region by a second dielectric layer extending the entire length of the second polysilicon gate. The second dielectric layer comprises a second dielectric material with a second dielectric constant. The first dielectric constant and the second dielectric constant may be different and both may be greater than the dielectric constant of silicon dioxide.