发明名称 COPPER ELECTROLYTIC PLATING SOLUTION
摘要 PURPOSE: A copper electrolytic plating solution comprising deposition rate inhibitor having an optimum composition to reduce copper deposition rate effectively is provided. CONSTITUTION: The copper electrolytic plating solution comprises an acidic solution comprising copper salts; and polyether based polymer and chlorine ions added to the acidic solution in a mole ratio of 0.5 to 1.5, wherein the copper salt is CuSO4, and the acidic solution is H2SO4 solution, wherein the polyether based polymer is capable of forming copper ions and complex compound using its own oxygen, wherein the polyether based polymer is polyethylene glycol, polypropylene glycol, or copolymer thereof, wherein HCl is used as a source of the chlorine ions, wherein the polyether based polymer is added to the acidic solution in quantity of 0.5 to 10 g per liter of the electrolytic plating solution, wherein a mole ratio of the polyether based polymer and chlorine ions is 1, and wherein polyethylene glycol is used as the polyether based polymer, and a mole ratio of the polyether based polymer and chlorine ions is 1.
申请公布号 KR20030035684(A) 申请公布日期 2003.05.09
申请号 KR20010068092 申请日期 2001.11.02
申请人 LG.PHILIPS LCD CO., LTD. 发明人 KIM, JAE JEONG;KIM, SU GIL;KIM, YONG SIK
分类号 C25D3/38;(IPC1-7):C25D3/38 主分类号 C25D3/38
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