发明名称 MAGNETIC MEMORY
摘要 PROBLEM TO BE SOLVED: To restrain an increase in coercive force due to an antimagnetic field over a free layer sufficient to write information with low power consumption, irrespective of the thickness of the free layer, moment, etc., whereas magnetoresistive effect elements are miniaturized. SOLUTION: The magnetic memory comprises magnetoresistive effect elements 10 each having a ferromagnetic free layer 16 and a nonmagnetic conductor-made electrode layer 22 on the free layer 16 of the magnetoresistance effect elements 10 so that the magnetic field of a current generated by the electrode layer 22 makes the magnetization of the free layer 16 inverted. The layer 22 has a part laminated on the layer 16. A magnetic material made magnetic layer 23 is provided on a part of the layer 22 which is not laminated on the free layer 16 but on the free layer 16 side of the electrode layer 22, thus increasing the apparent area of the free layer 16.
申请公布号 JP2003133524(A) 申请公布日期 2003.05.09
申请号 JP20010324622 申请日期 2001.10.23
申请人 SONY CORP 发明人 MIZUGUCHI TETSUYA
分类号 H01L27/105;H01L21/8246;H01L27/22;H01L29/82;H01L31/113;H01L43/08;(IPC1-7):H01L27/105 主分类号 H01L27/105
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