| 摘要 |
PROBLEM TO BE SOLVED: To enable an interlayer insulting film to secure ample surface planarity at the time of changing embedded wiring to multilayered wiring, by improving the film thickness unevenness of a protective film protecting the exposed surface of the embedded wiring by covering the surface and, in addition, to prevent a protective film forming plating material from forming a film on the insulating film. SOLUTION: On the surface of the exposed wiring of a semiconductor device having an embedded wiring structure, a protective film 20 having a planarized surface and composed at least of one kind of metal selected from among Co, Co alloys, Ni, and Ni alloys is formed by selectively forming the film 20 by means of electroless plating.
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