| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem wherein image face curvature, pattern slippage, distortion and defocus in a pattern face are worsened and pattern accuracy on a wafer is worsened due to self weight deflection of a reticle itself, face distortion and exposure thermal distortion when the reticle is clamped and a pattern on the reticle face is projected. SOLUTION: A means for detecting deformation distortion of the reticle face or the wafer face is provided, a correction optical means is provided between the reticle and a projection lens, a correction control amount of the correction optical means is determined by a signal of a reticle or wafer distortion detection means, and a distorted reticle pattern is corrected every shot, and every reticle exchange or wafer exchange by driving a correction optical element of the correction optical element.
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