| 摘要 |
PURPOSE: To provide a D/A converter capable of controlling the output of D/A- converted analog data with respect to time. CONSTITUTION: The D/A converter DAA is composed of a ferroelectric nonvolatile semiconductor memory, which consists of a data line DLA, a memory unit MUA composed of M memory cells MCAM and M plate lines PLM. Each memory cell is composed of a first electrode, a ferroelectric layer and a second electrode; in a memory unit MUA, the first electrodes of a memory cells MCAm are common and connected to the data line DLA, a second electrode of the m-th memory cell MCAm is connected to an m-th plate line PLm and the area of the ferroelectric layer forming the memory cells MCAm differs mutually among the memory cells.
|
