| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem of low-resistance wiring being difficult to be realized, because the resistance of extra fine copper wiring having a width or thickness which is about twice the length of the mean free path of copper atoms or smaller, becomes larger, as compared with aluminum wiring having about the same resistance value. SOLUTION: For wiring having such wiring form that the resistivityρof the wiring becomesρAl <ρCu , aluminum wiring is used and, for wiring having wiring form such that the resistivityρof the wiring becomesρAl >=ρCu , cupper wiring is used. Consequently, a semiconductor device having a multilayered wiring layer which propagates signals at a high speed can be realized with a low resistance. |
