| 摘要 |
PROBLEM TO BE SOLVED: To provide a gas supply method in which the inside of a treatment furnace of a semiconductor manufacturing device is not contaminated even when power supply is unexpectedly stopped by service interruption, and a gas supply facility used therefor. SOLUTION: The gas supply facility 1 has two refinery towers 3 and 3' arranged in parallel, two pieces of piping 10 and 10', and conducting and interrupting valves 13 and 13' for conducting or interrupting purge gas G. When electric power is normally supplied, the gas is refined while switching the purge gas flow G between the refinery towers 3 and 3'. The purge gas flow G is switched under such a state as the refinery capacity of one refinery tower 3 or 3' remains sufficiently, and when power supply is stopped, open/close state of the conducting and interrupting valves 13 and 13' are sustained. Thereby even when the power supply is stopped, the refined purge gas G can be supplied to the semiconductor manufacturing device, and the inside of a treatment furnace can be purged by refined purge gas G'.
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