发明名称 METHOD FOR FABRICATING INTRINSIC JOSEPHSON JUNCTION DEVICE
摘要 PURPOSE: A method for fabricating an intrinsic Josephson junction device is provided to be easily adapted to an integrated circuit by simply forming a Josephson junction device using a superconductive thin film. CONSTITUTION: An insulation layer is deposited on a substrate. The insulation layer is transformed to a desired shape through a photolithography process. The insulation layer exposed after the photolithography process is eliminated to expose the substrate. The superconductive thin film is deposited on the exposed substrate and the insulation layer. The exposed insulation layer is removed through an ion milling method.
申请公布号 KR20030035420(A) 申请公布日期 2003.05.09
申请号 KR20010067506 申请日期 2001.10.31
申请人 LG ELECTRONICS INC. 发明人 KYE, JEONG IL;MUN, SEUNG HYEON;PARK, JU DO
分类号 H01L39/22;(IPC1-7):H01L39/22 主分类号 H01L39/22
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