发明名称 DEPOSITION APPARATUS FOR FABRICATING SEMICONDUCTOR DEVICE
摘要 PURPOSE: A deposition apparatus for fabricating a semiconductor device is provided to prevent arcing and a damaged heater by including a plurality of connection units for connecting a heater with a power supply unit and by increasing an area where the plurality of connection units come in contact with one another. CONSTITUTION: Gas for depositing a layer on a semiconductor substrate(W) is supplied to a chamber(200). A susceptor(202) on which the semiconductor substrate is placed is installed inside the chamber. A heater supplies heat for heating the semiconductor substrate, installed under the susceptor. An insulation ring supports the heater, fixed inside the chamber. The first connection unit extends to the inside of the insulation ring, connected to the lower surface of the heater. The second connection unit is connected to the first connection unit in a vertical direction inside the insulation ring. One end of the second connection unit is inserted into the third connection unit, vertically installed inside the insulation ring. The fourth connection unit is horizontally connected to the third connection unit inside the insulation ring, extending from the outside of the chamber to the inside of the insulation ring through the chamber. A power connection member(222) connects power to the heater, including the first, second, third and fourth connection units.
申请公布号 KR20030035386(A) 申请公布日期 2003.05.09
申请号 KR20010067452 申请日期 2001.10.31
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 CHO, JEONG HUN;HONG, HYEONG SIK;KIM, BYEONG HAN;LEE, SANG YEOL;LEE, TAE WON
分类号 H01L21/205;(IPC1-7):H01L21/205 主分类号 H01L21/205
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