| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a semiconductor device having a long lifetime with low power consumption by forming an ohmic contact of high quality in a III-V semiconductor material. SOLUTION: The semiconductor device 10 comprises a first III-V semiconductor layer 110 having an energy level of a first conduction band and a first valence band, a second III-V semiconductor layer 120 having an energy level of a second conduction band and a second valence band, and a metal layer 130 having a Fermi evergy level. The Fermi level is higher than the evergy levels of the first and second valance bands, and the evergy level of the second valance band exists between the Fermi level of the metal layer 130 and the energy level of the first valance band. |
