| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory which can realize appropriate read-out of data by a signal indicating that stable read-out of memories can be performed at the start of power supply. SOLUTION: In a device provided with a memory block 4 constituted of memory arrays in which a plurality of memory cells consisting of nonvolatile transistors are arranged in a matrix state, and a boosting means for read-out consisting of a charge pump 2 for reading contents of the memory array, a SELR signal is outputted in accordance with rise of the boosting means for read-out consisting of the charge pump 2 after supply of the power source, while a RD signal indicating a stable securement state of a boosting output by the boosting means for read-out consisting of the charge pump 2 after the prescribed time measured by a timer circuit 91 from the start of the power supply is outputted, and a read-enable signal indicating that contents of the memory array can be read by the SELR signal and the RD signal, by the read- enable generating circuit 92 is generated.</p> |
