| 摘要 |
PROBLEM TO BE SOLVED: To provide an element structure that can effectively increase carrier concentration supplied to a channel layer and produce a large output in a GaN- based compound semiconductor element. SOLUTION: An HEMT1 is provided with a channel layer 119 made of group III nitride, essentially containing Ga and a pair of n-type doped electron supply layers 110 that are arranged on both sides of the channel layer 119 in the layer- thickness direction, are larger in conductor bottom energy than the channel layers 119, and are made of group III nitride essentially containing Ga. In such a structure, two DEG layers can be arranged on both surfaces of the channel layer 119, by providing the electron supply layers 110 on both the sides of the channel layer 119 in the layer-thickness direction. As a result, the carrier concentration to be supplied to the channel layer can be increased effectively, so that a large output can be produced in an element, as compared with a structure where two DEG layers are formed only on one side.
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