发明名称 ELECTRODE STRUCTURE FOR INJECTING CARRIER INTO POROUS SILICON DIAPHRAGM AND FABRICATING METHOD THEREOF
摘要 PURPOSE: An electrode structure for injecting carriers into a porous silicon diaphragm is provided to fabricate a light emitting device using porous silicon and a sensor device like an optical sensor or a humidity sensor by forming an anode and a cathode of a horizontal structure in which electrons and holes can be simultaneously injected into the porous silicon diaphragm. CONSTITUTION: Aluminum(4) is deposited on the back surface of a silicon substrate for an ohmic contact. Porous silicon(1) is formed in a concave groove of an oxide layer silicon substrate(5). N+ electrode(2) and p+ electrode(3) are formed in the concave groove of the porous silicon. The porous silicon diaphragm as a metal electrode is formed in the upper roughness of the n+ and p+ electrodes and in the roughness of the oxide layer silicon substrate.
申请公布号 KR20030035683(A) 申请公布日期 2003.05.09
申请号 KR20010068091 申请日期 2001.11.02
申请人 KOREA CHUNGANG EDUCATIONAL FOUNDATION 发明人 KANG, CHEOL GU;MIN, NAM GI
分类号 H01L29/45;(IPC1-7):H01L29/45 主分类号 H01L29/45
代理机构 代理人
主权项
地址
您可能感兴趣的专利