发明名称 |
ELECTRODE STRUCTURE FOR INJECTING CARRIER INTO POROUS SILICON DIAPHRAGM AND FABRICATING METHOD THEREOF |
摘要 |
PURPOSE: An electrode structure for injecting carriers into a porous silicon diaphragm is provided to fabricate a light emitting device using porous silicon and a sensor device like an optical sensor or a humidity sensor by forming an anode and a cathode of a horizontal structure in which electrons and holes can be simultaneously injected into the porous silicon diaphragm. CONSTITUTION: Aluminum(4) is deposited on the back surface of a silicon substrate for an ohmic contact. Porous silicon(1) is formed in a concave groove of an oxide layer silicon substrate(5). N+ electrode(2) and p+ electrode(3) are formed in the concave groove of the porous silicon. The porous silicon diaphragm as a metal electrode is formed in the upper roughness of the n+ and p+ electrodes and in the roughness of the oxide layer silicon substrate.
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申请公布号 |
KR20030035683(A) |
申请公布日期 |
2003.05.09 |
申请号 |
KR20010068091 |
申请日期 |
2001.11.02 |
申请人 |
KOREA CHUNGANG EDUCATIONAL FOUNDATION |
发明人 |
KANG, CHEOL GU;MIN, NAM GI |
分类号 |
H01L29/45;(IPC1-7):H01L29/45 |
主分类号 |
H01L29/45 |
代理机构 |
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