METHOD FOR ANALYZING ION IMPLANTATION AREA

摘要

PURPOSE: A method for analyzing an ion implantation area is provided to analyze the depth, breadth and even three-dimensional shape of the ion implantation area by selectively etching only the ion implantation area from a sample including the ion implantation area and by measuring the surface roughness. CONSTITUTION: The first sample(20) is so sawed that the ion implantation area is exposed to the side surface of the first sample. The ion implantation area exposed to the side surface of the first sample is selectively etched. The surface roughness of the side surface of the first sample is measured.