SEMICONDUCTOR MEMORY, AND DATA WRITE METHOD FOR SEMICONDUCTOR MEMORY

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor memory in which a required time for data write operation can be suppressed to the minimum even if it is repeated the maximum number of times, and a data write method of the semiconductor memory. SOLUTION: A flash memory 101 is set to a test mode by setting a test pad TP to a L level. When verifying is passed, a verify-circuit VC outputs an adaptation signal VPASS of a H level, but each adaptation signal input terminal (VPASS) of a data write control circuit WCC and a data write counter circuit WCT is fixed to a L level by an adaptation signal invalidating means 3. A latch circuit LC holds a latch adaptation signal VPL at a H level, and a verify-start signal input terminal (VR) of the verify-circuit VC is fixed to a L level. The write-operation requiring no verify-operation is repeated until the number of times of the operations reaches the number of times set to a counter circuit WCT.