| 摘要 |
<p>PROBLEM TO BE SOLVED: To solve such a problem that a flash EEPROM has a limit of the number of times of rewriting and a specific memory block having high rewriting frequency is made defective early. SOLUTION: This device is provided with a block selecting circuit storing defective information of a defective memory block in a large capacity memory block having low rewriting frequency, referring to the stored defective information, and selecting a backup memory block when the defective memory block is selected.</p> |
