| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide technology by which sense amplifier operation in a nonvolatile memory device is performed further efficiently. SOLUTION: This sense amplifier circuit has a current source that is configurable to source any of at least two nonzero current levels in the sense amplifier circuit. The amplifier circuit is controlled by control circuitry in the nonvolatile memory device so that each sense amplifier circuit sources a first current level during the pre-charge cycle of a memory read operation, and a second current level being greater than the first current level during the memory cell sense operation. In this way, the sense amplifier circuit consumes less power during the memory read operation without an appreciable loss in performance.</p> |
