| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a n-type ZnTe-based compound semiconductor having high carrier concentration and low resistance, by which a semiconductor device having superior characteristic can be obtained effectively, ZnTe-based compound semiconductor to be manufacture by using the method, and a semiconductor device using the ZnTe-based compound semiconductor. SOLUTION: When the ZnTe-based compound semiconductor is epitaxially grown on a substrate, a first dopant made of the group 13 (3B) element for controlling a ZnTe-based compound crystal in n type and a second dopant made of the group two (2A) element, whose bonding energy with a Te element is equivalent or more to that of Zn element, are doped in the ZnTe-based compound crystal at the same time. In addition, the second dopant is doped, so that the number of atoms is higher than the concentration of Zn vacancy (about 10<18> cm<-3> or more) and the concentration in the ZnTe-based compound crystal is 1% or less. |
