| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and transistor driving method which enables the effective use of electric charge stored in a gate input capacitor of an insulated gate bipolar transistor (IGBT) to reduce the required capacity of the transistor driving power and achieves the power saving of the overall device. SOLUTION: When a driving part 100 is going to charge a gate input capacitor 6 of an IGBT 7, the gate input capacitor 6 has already an electric charge stored in discharging of itself. This enables a reduction in the amount of an electric charge supplied to the gate input capacitor 6 by the driving part 100 until the charging of the gate input capacitor 6 is completed. Therefore, the required capacity of a control power source 15a is able to be reduced. Further, the effective use of electric charge stored in the gate input capacitor enables the power saving for the semiconductor device. |
