发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To improve mechanical strength of a thinned semiconductor element without increasing a manufacturing cost in a manufacturing method of a semiconductor device performing back grind processing on a rear face in a back grind process. SOLUTION: In the manufacturing method of the semiconductor device having the back grind process for back-grinding the rear face of a wafer 1 and a dicing process for dicing the wafer 1 along a prescribed dicing line after the back grind process is completed to be fragmentated into individual semiconductor elements 10, a polishing mark formation process (Figure 5(C)) for forming a polishing mark 20A in a direction (45 degree direction) different from the extension direction of the dicing line in the dicing process is provided between the back grind process and the dicing process.</p>
申请公布号 JP2003133260(A) 申请公布日期 2003.05.09
申请号 JP20010322812 申请日期 2001.10.19
申请人 FUJITSU LTD 发明人 SHINJO YOSHIAKI;SHIMOBETSUPU YUZO;TESHIROGI KAZUO;YOSHIMOTO KAZUHIRO;YOSHIDA EIJI;HAYASAKA NOBORU;WATABE MITSUHISA
分类号 B23K26/00;B23K26/06;B23K26/40;B23K101/40;B24B1/00;B24B7/22;H01L21/301;H01L21/304;H01L21/78;(IPC1-7):H01L21/301 主分类号 B23K26/00
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