发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
摘要 |
<p>PROBLEM TO BE SOLVED: To improve mechanical strength of a thinned semiconductor element without increasing a manufacturing cost in a manufacturing method of a semiconductor device performing back grind processing on a rear face in a back grind process. SOLUTION: In the manufacturing method of the semiconductor device having the back grind process for back-grinding the rear face of a wafer 1 and a dicing process for dicing the wafer 1 along a prescribed dicing line after the back grind process is completed to be fragmentated into individual semiconductor elements 10, a polishing mark formation process (Figure 5(C)) for forming a polishing mark 20A in a direction (45 degree direction) different from the extension direction of the dicing line in the dicing process is provided between the back grind process and the dicing process.</p> |
申请公布号 |
JP2003133260(A) |
申请公布日期 |
2003.05.09 |
申请号 |
JP20010322812 |
申请日期 |
2001.10.19 |
申请人 |
FUJITSU LTD |
发明人 |
SHINJO YOSHIAKI;SHIMOBETSUPU YUZO;TESHIROGI KAZUO;YOSHIMOTO KAZUHIRO;YOSHIDA EIJI;HAYASAKA NOBORU;WATABE MITSUHISA |
分类号 |
B23K26/00;B23K26/06;B23K26/40;B23K101/40;B24B1/00;B24B7/22;H01L21/301;H01L21/304;H01L21/78;(IPC1-7):H01L21/301 |
主分类号 |
B23K26/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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