| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which has a low operating voltage and suppresses a leak current. SOLUTION: The semiconductor device has a source region 2 and a drain region 3 separately formed on a Si substrate 1 and a gate 10 formed on a region between the source and drain regions 2, 3. The gate 10 is composed of a Gd2 O3 insulation film 4 formed on the Si substrate 1, a ferroelectric film 6 formed thereon and a gate electrode 5 formed thereon. The insulation film 4 is made of Gd2 O3 having a higher relative dielectric constant than SiO2 used in a prior art or other gadolinium compounds. This lowers the operating voltage, and the thick insulation film 4 is formable for restraining a leak current from increasing and heavy metal from diffusing in a semiconductor layer.
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