METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method for obtaining a structure where a good epitaxial growth layer is further stacked on an ion implanted layer. SOLUTION: The method for manufacturing a semiconductor device comprises an ion implantation step for implanting ions into a first epitaxial growth layer 2 as a base layer at 300 deg.C or higher, an anneal step for annealing following to the ion implantation step and a growth step for forming a second epitaxial growth layer 4 by epitaxial growth on the first epitaxial growth layer 2 as the base layer.