| 摘要 |
PROBLEM TO BE SOLVED: To provide a raw material wafer for polishing that can be produced without the use of a special jig during a polishing process into a mirror-surfaced wafer with little peripheral sagging and the high flatness of at least 0.15μm or below in SFQR, and is shaped to have, if necessary, a little sagging or rather a little bound in the peripheral portion thereof. SOLUTION: A raw material wafer 1 for polishing, wherein there exists a film such as an oxide film 2 or the like comprising a material which takes longer time for polishing than the wager at a chamfered portion which contacts at least a main surface, and there does not exist the film at the main surface. For example, after the oxide film is formed on the entire wafer, the oxide film on at least the main surface of the wafer is removed by surface grinding, etching, or wrapping, thus making it possible to produce the wafer which has the oxide film at a chamfered portion contacting at least the main surface of the wafer and no oxide film on the main surface.
|
