| 摘要 |
The apparatus for photolithography comprises a mask (2) and a support (4) designed for receiving a sample (1) which is to be exposed to light (3) passing through the mask in order to define the exposed and non-exposed regions at the level of the surface (S) of the sample. The apparatus also comprises the displacement devices actuated by piezoelectric elements (6,7), the first for displacing the exposed and non-exposed regions by displacing the sample in a horizontal direction, and the second for fine vertical adjustments of the sample, which are controlled by varying the outputs of electrical generators (9,19) connected to the electrodes (7,8; 18,18a) of the piezoelectric elements (6,17). The basic vertical adjustments are carried out by use of a lowre support (10) mounted on a piston (12) which can be displaced in a foundation (13) by injecting or evacuating a gas through a duct (15). The method for photolithography includes at least two successive expositions of the surface (S) of the sample (1) which are separated by at least one displacement of the exposed and non-exposed regions, where the displacement is obtained by at least one displacement device actuated by a piezoelectric element. The mask (2) is laid out so to prevent the passage of light at the level of opaque zones and let the light through at the level of transparent zones of the mask. The apparatus comprises a supplementary displacement device actuated by another piezoelectric element for displacing the exposed and non-exposed regions in another horizontal direction, in particular perpendicular to the first horizontal direction. The mask (2) is substantially flat and the displacements are carried out within a plane parallel to the mask. In the second embodiment, which is better suited to a large-scale manufacture of integrated electronic components, the displacement devices are designed to displace the mask with respect to the support, and the apparatus comprises an optical element placed between the mask and the support. The apparatus also comprises a wedge or height limiter (16) for displacements in vertical direction actuated by the second piezoelectric element (17). The successive expositions of the sample are by displacing at least one element chosen from the group including the support (4), the mask (2), the source of light, and the optical element, where the sample (1) is joined with the support (4) during the series of expositions by use of a suction duct (5). A substrate on the basis of semiconductor material comprising integrated electronic components is obtained by the method of photolithography as claimed. A microelectronic product is obtained by the method. A nanometric product is obtained by the method. |
