METHOD FOR FABRICATING HETEROSTRUCTURE FIELD EFFECT TRANSISTOR

摘要

PURPOSE: A method for fabricating a hetero structure field effect transistor(HFET) is provided to reduce critical dimension and improve the ordering state of gate electrodes on AlGaN/GaN HFET device by forming gate electrodes before ohmic electrodes. CONSTITUTION: An updoped I-GaN and AlGaN semiconductor layer are deposited sequentially on a substrate. The resultant structure is mesa-etched to divide devices. A photoresist layer pattern is formed on the AlGaN semiconductor layer by image reversal lithography method. A Gate electrode(G) is formed by using the photoresist layer. Surface treatment is done by using ICP. Ohmic electrodes(S,D) are formed on the AlGaN layer.