| 摘要 |
PURPOSE: A memory plane and a memory device are provided, which dose not need to fabricate vias, so reducing the relative complexity of the device. CONSTITUTION: In the device, the substrate(110), one or more row conductors(120) and one or more column conductors(130) is formed. The row and column conductors(120,130) extends in a row direction and column direction, respectively, to form a cross-point at each intersection. At a cross-point, a memory cell(140) is formed. Each memory cell(140) is individually addressable through the respective row and column conductors(120,130) respectively. The memory cell(140) is read-only, randomly accessible, or one-time programmable, thus allowing the memory array(100) to be a read-only memory (ROM), random access memory (RAM), or one-time programmable memory (OTP), respectively. For example, the memory cell(140) is a fuse memory cell, a fuse/diode memory cell, a fuse/anti-fuse memory cell, a magnetic memory cell, a diode memory cell, a magnetic/diode memory cell, a phase change memory cell, a resistive element cell, and the like. |
