| 摘要 |
PROBLEM TO BE SOLVED: To obtain a highly integrated high-performance element by simplifying the manufacturing process of the element, using an ultra thin hafnium oxide (HfO2 ) or ZrO2 film formed in sol-gel method for the gate insulating film of a transistor which serves as a base in the element and improving the characteristics of the insulating film. SOLUTION: A hafnia sol liquid is prepared by dissolving a hafnium tetrachloride (HfCl4 ) in ethanol under a nitrogen atmosphere. Then a gel film is obtained, by uniformly applying the hafnia sol solution to the surface of an Si wafer by the spinner method (500 rpm/5 seconds to 2,000 rpm/30 seconds). Then the Si wafer, having the formed gel film, is put in an electric furnace and baked within the temperature range of 550-1,300 deg.C by a quick heating method (at a temperature increase rate of 10 deg.C/minute). The gel film is used for setting the temperature of the electric furnace, and the Si wafer is put directly in the furnace and baked in the furnace for 30 minutes.
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