| 摘要 |
PURPOSE: To provide heat treatment equipment capable of uniformly and cleanly treating a semiconductor wafer and preventing a decrease in life of the equipment. CONSTITUTION: When the semiconductor wafer W is heat-treated, the semiconductor wader W is made to come into contact with the thermal diffusion plate 73 in a heating state and thus preheated, and pressure inside a heat treatment chamber 65 is reduced. Immediately after the surface temperature of the semiconductor wafer W reaches a preheating temperature T1, a xenon flash lamp 69 turns on and flash heating is performed. |
